SRE30N065FSSDF Todos los transistores

 

SRE30N065FSSDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE30N065FSSDF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 142 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 46 nS
   Coesⓘ - Capacitancia de salida, typ: 144 pF
   Qgⓘ - Carga total de la puerta, typ: 50.1 nC
   Paquete / Cubierta: TO247 TO263
     - Selección de transistores por parámetros

 

SRE30N065FSSDF Datasheet (PDF)

 ..1. Size:651K  sanrise-tech
 sre30n065fssdf.pdf pdf_icon

SRE30N065FSSDF

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDF General Description Symbol The SRE30N065FSSDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDF is available in TO-263 and TO-247

 1.1. Size:600K  sanrise-tech
 sre30n065fssdg.pdf pdf_icon

SRE30N065FSSDF

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDG General Description Symbol The SRE30N065FSSDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDG is available in TO-263 and TO-247

 3.1. Size:1240K  sanrise-tech
 sre30n065fsudf.pdf pdf_icon

SRE30N065FSSDF

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDF General Description Symbol The SRE30N065FSUDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDF is available in TO-247 TO-263 and TO-220

 3.2. Size:1151K  sanrise-tech
 sre30n065fsudg.pdf pdf_icon

SRE30N065FSSDF

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDG General Description Symbol The SRE30N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDG is available in TO-220CTO-263 and TO-247

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGH2N250 | 7MBR50VP060-50

 

 
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