SRE30N065FSUDG Todos los transistores

 

SRE30N065FSUDG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE30N065FSUDG
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 170 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 34.7 nS
   Coesⓘ - Capacitancia de salida, typ: 144 pF
   Qgⓘ - Carga total de la puerta, typ: 53.5 nC
   Paquete / Cubierta: TO247 TO263 TO220
 

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SRE30N065FSUDG Datasheet (PDF)

 ..1. Size:1151K  sanrise-tech
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SRE30N065FSUDG

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDG General Description Symbol The SRE30N065FSUDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDG is available in TO-220CTO-263 and TO-247

 1.1. Size:1240K  sanrise-tech
 sre30n065fsudf.pdf pdf_icon

SRE30N065FSUDG

Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSUDF General Description Symbol The SRE30N065FSUDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSUDF is available in TO-247 TO-263 and TO-220

 3.1. Size:600K  sanrise-tech
 sre30n065fssdg.pdf pdf_icon

SRE30N065FSUDG

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDG General Description Symbol The SRE30N065FSSDG is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDG is available in TO-263 and TO-247

 3.2. Size:651K  sanrise-tech
 sre30n065fssdf.pdf pdf_icon

SRE30N065FSUDG

Preliminary Datasheet 30A 650V Trench Field stop IGBT with anti-parallel diode SRE30N065FSSDF General Description Symbol The SRE30N065FSSDF is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra-low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE30N065FSSDF is available in TO-263 and TO-247

MOSTRAR MÁS

Otros transistores... SRE100N065FSUD8 , SRE100N120FSUDA , SRE15N060FSUDE , SRE15N065FSUDJ , SRE160N065FSUD8 , SRE30N065FSSDF , SRE30N065FSSDG , SRE30N065FSUDF , NCE80TD65BT , SRE40N065FSU2DF , SRE40N065FSU2DG , SRE40N065FSUDF , SRE40N065FSUDG , SRE40N065FSUR , SRE50N065FSU , SRE50N065FSUD6 , SRE50N120FSUD9 .

History: APT50GS60BRDQ2G | 1MBH10D-060 | IXGH36N60A3D4 | MG12200D-BN2MM | MG1275W-XBN2MM | DIM800DDS12-A | AFGY120T65SPD

 

 
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