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IXGH39N60BS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH39N60BS

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 60

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 55

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH39N60BS Datasheet (PDF)

1.1. ixgh39n60b.pdf Size:152K _igbt

IXGH39N60BS
IXGH39N60BS

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

1.2. ixgh39n60bd1.pdf Size:152K _igbt

IXGH39N60BS
IXGH39N60BS

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

 1.3. ixgh39n60b.pdf Size:152K _ixys

IXGH39N60BS
IXGH39N60BS

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

1.4. ixgh39n60bd1.pdf Size:152K _ixys

IXGH39N60BS
IXGH39N60BS

HiPerFASTTM IGBT IXGH39N60B VCES = 600 V IXGH39N60BD1 IC25 = 76 A IXGT39N60B VCE(sat) = 1.7 V IXGT39N60BD1 tfi = 200 ns Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C76 A IC90 TC =

Otros transistores... IXGH32N60B , IXGH32N60BD1 , IXGH32N60BU1 , IXGH32N60C , IXGH32N60CD1 , IXGH38N60 , IXGH39N60B , IXGH39N60BD1 , 10N40C1D , IXGH39N60CD1 , IXGH40N30 , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B .

 

 
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