SRE50N065FSU Todos los transistores

 

SRE50N065FSU - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE50N065FSU
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 240
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 80
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 55
   Capacitancia de salida (Cc), typ, pF: 220
   Carga total de la puerta (Qg), typ, nC: 110
   Paquete / Cubierta: TO247

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SRE50N065FSU Datasheet (PDF)

 ..1. Size:993K  sanrise-tech
sre50n065fsu.pdf

SRE50N065FSU
SRE50N065FSU

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE50N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

 0.1. Size:994K  sanrise-tech
sre50n065fsud6.pdf

SRE50N065FSU
SRE50N065FSU

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 8.1. Size:1167K  sanrise-tech
sre50n120fsud9.pdf

SRE50N065FSU
SRE50N065FSU

Datasheet 50A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE50N120FSUD9 General Description Symbol The SRE50N120FSUD9 is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, industrial power supplies, etc. The SRE50N120

 8.2. Size:1295K  sanrise-tech
sre50n120fsus7.pdf

SRE50N065FSU
SRE50N065FSU

Datasheet 50A 1200V Trench Fieldstop IGBT with SiC SBD SRE50N120FSUS7 General Description Symbol The SRE50N120FSUS7 is a Field Stop Trench CIGBT with anti-parallel SiC SBD, which offers low switching losses, high energy efficiency and Ghigh avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. E1 E2The SRE50N120FSUS7 is available in TO-2

 8.3. Size:1335K  sanrise-tech
sre50n120fsuda.pdf

SRE50N065FSU
SRE50N065FSU

Datasheet 50A 1200V Trench Fieldstop IGBT with FRD SRE50N120FSUDA General Description Symbol The SRE50N120FSUDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. Figure 1 Symbol of SRE50N120FSUDA The SRE50N120FSUDA is

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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