SRE50N065FSUD6 Todos los transistores

 

SRE50N065FSUD6 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRE50N065FSUD6

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 288 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 55 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: TO247

 Búsqueda de reemplazo de SRE50N065FSUD6 IGBT

- Selección ⓘ de transistores por parámetros

 

SRE50N065FSUD6 datasheet

 ..1. Size:994K  sanrise-tech
sre50n065fsud6.pdf pdf_icon

SRE50N065FSUD6

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 2.1. Size:993K  sanrise-tech
sre50n065fsu.pdf pdf_icon

SRE50N065FSUD6

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench C IGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. G The SRE50N065FSU package is TO-247. E Features High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

 8.1. Size:1167K  sanrise-tech
sre50n120fsud9.pdf pdf_icon

SRE50N065FSUD6

Datasheet 50A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE50N120FSUD9 General Description Symbol The SRE50N120FSUD9 is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, industrial power supplies, etc. The SRE50N120

 8.2. Size:1295K  sanrise-tech
sre50n120fsus7.pdf pdf_icon

SRE50N065FSUD6

Datasheet 50A 1200V Trench Fieldstop IGBT with SiC SBD SRE50N120FSUS7 General Description Symbol The SRE50N120FSUS7 is a Field Stop Trench C IGBT with anti-parallel SiC SBD, which offers low switching losses, high energy efficiency and G high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. E1 E2 The SRE50N120FSUS7 is available in TO-2

Otros transistores... SRE30N065FSUDF , SRE30N065FSUDG , SRE40N065FSU2DF , SRE40N065FSU2DG , SRE40N065FSUDF , SRE40N065FSUDG , SRE40N065FSUR , SRE50N065FSU , FGH40N60UFD , SRE50N120FSUD9 , SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , SRE50N120FSUS7T4 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 .

History: TGAN40N120F2DW | STGWT40H65DFB | SGP15N60RUF

 

 

 


History: TGAN40N120F2DW | STGWT40H65DFB | SGP15N60RUF

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726

 

 

↑ Back to Top
.