SRE50N120FSUS7T Todos los transistores

 

SRE50N120FSUS7T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE50N120FSUS7T
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 500
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 100
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 24
   Capacitancia de salida (Cc), typ, pF: 215
   Carga total de la puerta (Qg), typ, nC: 410
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de SRE50N120FSUS7T - IGBT

 

SRE50N120FSUS7T Datasheet (PDF)

 ..1. Size:1295K  sanrise-tech
sre50n120fsus7.pdf

SRE50N120FSUS7T SRE50N120FSUS7T

Datasheet 50A 1200V Trench Fieldstop IGBT with SiC SBD SRE50N120FSUS7 General Description Symbol The SRE50N120FSUS7 is a Field Stop Trench CIGBT with anti-parallel SiC SBD, which offers low switching losses, high energy efficiency and Ghigh avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. E1 E2The SRE50N120FSUS7 is available in TO-2

 2.1. Size:1167K  sanrise-tech
sre50n120fsud9.pdf

SRE50N120FSUS7T SRE50N120FSUS7T

Datasheet 50A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE50N120FSUD9 General Description Symbol The SRE50N120FSUD9 is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, industrial power supplies, etc. The SRE50N120

 2.2. Size:1335K  sanrise-tech
sre50n120fsuda.pdf

SRE50N120FSUS7T SRE50N120FSUS7T

Datasheet 50A 1200V Trench Fieldstop IGBT with FRD SRE50N120FSUDA General Description Symbol The SRE50N120FSUDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. Figure 1 Symbol of SRE50N120FSUDA The SRE50N120FSUDA is

 8.1. Size:994K  sanrise-tech
sre50n065fsud6.pdf

SRE50N120FSUS7T SRE50N120FSUS7T

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 8.2. Size:993K  sanrise-tech
sre50n065fsu.pdf

SRE50N120FSUS7T SRE50N120FSUS7T

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE50N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


SRE50N120FSUS7T
  SRE50N120FSUS7T
  SRE50N120FSUS7T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top