SRE50N120FSUS7T4 Todos los transistores

 

SRE50N120FSUS7T4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRE50N120FSUS7T4
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 24 nS
   Coesⓘ - Capacitancia de salida, typ: 215 pF
   Qgⓘ - Carga total de la puerta, typ: 410 nC
   Paquete / Cubierta: TO247-4

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SRE50N120FSUS7T4 Datasheet (PDF)

 ..1. Size:1295K  sanrise-tech
sre50n120fsus7.pdf

SRE50N120FSUS7T4
SRE50N120FSUS7T4

Datasheet 50A 1200V Trench Fieldstop IGBT with SiC SBD SRE50N120FSUS7 General Description Symbol The SRE50N120FSUS7 is a Field Stop Trench CIGBT with anti-parallel SiC SBD, which offers low switching losses, high energy efficiency and Ghigh avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. E1 E2The SRE50N120FSUS7 is available in TO-2

 2.1. Size:1167K  sanrise-tech
sre50n120fsud9.pdf

SRE50N120FSUS7T4
SRE50N120FSUS7T4

Datasheet 50A 1200V Trench Fieldstop IGBT with anti-parallel diode SRE50N120FSUD9 General Description Symbol The SRE50N120FSUD9 is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, industrial power supplies, etc. The SRE50N120

 2.2. Size:1335K  sanrise-tech
sre50n120fsuda.pdf

SRE50N120FSUS7T4
SRE50N120FSUS7T4

Datasheet 50A 1200V Trench Fieldstop IGBT with FRD SRE50N120FSUDA General Description Symbol The SRE50N120FSUDA is a Field Stop Trench IGBT with anti-parallel diode, which offers low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as UPS, solar inverters, etc. Figure 1 Symbol of SRE50N120FSUDA The SRE50N120FSUDA is

 8.1. Size:994K  sanrise-tech
sre50n065fsud6.pdf

SRE50N120FSUS7T4
SRE50N120FSUS7T4

Datasheet 50A 650V Trench Fieldstop IGBT with anti-parallel diode SRE50N065FSUD6 General Description Symbol The SRE50N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE50N065FSUD6 package is TO-247. Figure 1 Symbol of SRE50N

 8.2. Size:993K  sanrise-tech
sre50n065fsu.pdf

SRE50N120FSUS7T4
SRE50N120FSUS7T4

Datasheet 50A 650V Trench Fieldstop IGBT SRE50N065FSU General Description Symbol The SRE50N065FSU is a Field Stop Trench CIGBT, which offers ultra low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. GThe SRE50N065FSU package is TO-247. EFeatures High Breakdown Voltage to 650V Figure 1 Symbol of SRE50N065

Otros transistores... SRE40N065FSUDG , SRE40N065FSUR , SRE50N065FSU , SRE50N065FSUD6 , SRE50N120FSUD9 , SRE50N120FSUDAT , SRE50N120FSUDATP , SRE50N120FSUS7T , FGPF4536 , SRE60N065FSU , SRE60N065FSU2S8 , SRE60N065FSUD6 , SRE60N065FSUDG , SRE60N120FSSDAT , SRE60N120FSSDATP , SRE75N065FSU2DH , SRE75N065FSUD6 .

 

 
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