HCKW75N65GH2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCKW75N65GH2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 625 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 122 nS

Coesⓘ - Capacitancia de salida, typ: 244 pF

Encapsulados: TO247

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HCKW75N65GH2 datasheet

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HCKW75N65GH2

HCKW75N65GH2 @ Trench-FS Cool-Watt IGBT HCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a SiC diode,has the characteristics of low V , high cesat junction temperature and strong robustness. It is very suitable for products with high switching frequency. Features CoolWatt@ Trench-FS technology Lo

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HCKW75N65GH2

HCKW75N65FH2 @ Trench-FS Cool-Watt IGBT HCKW75N65FH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo

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 hckw75n65bh2.pdf pdf_icon

HCKW75N65GH2

HCKW75N65BH2 @ Trench-FS Cool-Watt IGBT HCKW75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo

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