HCKW75N65GH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCKW75N65GH2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 625
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 122
Capacitancia de salida (Cc), typ, pF: 244
Paquete / Cubierta: TO247
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HCKW75N65GH2 Datasheet (PDF)
hckw75n65gh2.pdf
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HCKW75N65GH2@Trench-FS Cool-Watt IGBTHCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
hckw75n65fh2.pdf
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HCKW75N65FH2@Trench-FS Cool-Watt IGBTHCKW75N65FH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
hckw75n65bh2.pdf
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HCKW75N65BH2@Trench-FS Cool-Watt IGBTHCKW75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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