IGW40N60TP Todos los transistores

 

IGW40N60TP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW40N60TP
   Tipo de transistor: IGBT
   Código de marcado: G40DTP
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 246 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Qgⓘ - Carga total de la puerta, typ: 177 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW40N60TP Datasheet (PDF)

 ..1. Size:1458K  infineon
 igw40n60tp.pdf pdf_icon

IGW40N60TP

IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera

 6.1. Size:1684K  infineon
 igw40n60h3 rev2 1g.pdf pdf_icon

IGW40N60TP

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial & MultimarketIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175

 6.2. Size:1458K  infineon
 igw40n60dtp.pdf pdf_icon

IGW40N60TP

IGBTTRENCHSTOPTM Performance technologyIGW40N60DTP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW40N60TPTRENCHSTOPTM Performance Series600V DuoPack IGBTTRENCHSTOPTM Performance seriesFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction tempera

 6.3. Size:1990K  infineon
 igw40n60h3.pdf pdf_icon

IGW40N60TP

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW40N60H3600V IGBTHigh speed switching series third generationData SheetIndustrial Power ControlIGW40N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-para

MOSTRAR MÁS

Otros transistores... OST80N65HMF , HCKW75N65GH2 , HCKZ75N65GH2 , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , IKW75N60TA , IRGP4063D , IXSM35N100A , IXSM40N60 , GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 .

History: STGWT40V60DLF | FGD3N60LSD

 

 
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