OST120N65H4UMF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST120N65H4UMF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 536 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 52 nS

Coesⓘ - Capacitancia de salida, typ: 320 pF

Encapsulados: TO247-4

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OST120N65H4UMF datasheet

 ..1. Size:813K  oriental semi
 ost120n65h4umf.pdf pdf_icon

OST120N65H4UMF

OST120N65H4UMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4UMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 3.1. Size:787K  oriental semi
 ost120n65h4smf.pdf pdf_icon

OST120N65H4UMF

OST120N65H4SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H4SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.1. Size:767K  oriental semi
 ost120n65h5smf.pdf pdf_icon

OST120N65H4UMF

OST120N65H5SMF Enhancement Mode N-Channel Power IGBT General Description OST120N65H5SMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM tec

 4.2. Size:774K  oriental semi
 ost120n65hemf.pdf pdf_icon

OST120N65H4UMF

OST120N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST120N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

MOSTRAR MÁS

Otros transistores... HIA50N65IH-JA, HIA20N140IH-DA, GT30F122, SG40T120DB, SG60T120UDB3, SGT60U65FD1PN, SGT60U65FD1PT, OST120N65H4SMF, RJH60F7BDPQ-A0, OST120N65H5SMF, OST120N65HEMF, OST15N65DRF, OST15N65FRF, OST15N65KRF, OST15N65PRF, OST160N65H5MF, OST20N135HRF