OST50N65HF Todos los transistores

 

OST50N65HF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST50N65HF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 69 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Qgⓘ - Carga total de la puerta, typ: 99 nC
   Paquete / Cubierta: TO247

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OST50N65HF Datasheet (PDF)

 ..1. Size:698K  oriental semi
ost50n65hf.pdf

OST50N65HF
OST50N65HF

OST50N65HF Enhancement Mode N-Channel Power IGBT General Description OST50N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

 0.1. Size:535K  oriental semi
ost50n65hf-d.pdf

OST50N65HF
OST50N65HF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:732K  oriental semi
ost50n65hmf.pdf

OST50N65HF
OST50N65HF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:756K  oriental semi
ost50n65hewf.pdf

OST50N65HF
OST50N65HF

 5.3. Size:755K  oriental semi
ost50n65h4ewf.pdf

OST50N65HF
OST50N65HF

 5.4. Size:747K  oriental semi
ost50n65hszf.pdf

OST50N65HF
OST50N65HF

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.5. Size:765K  oriental semi
ost50n65hm2f.pdf

OST50N65HF
OST50N65HF

OST50N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST50N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.6. Size:752K  oriental semi
ost50n65hsnf.pdf

OST50N65HF
OST50N65HF

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.7. Size:617K  oriental semi
ost50n65hzf.pdf

OST50N65HF
OST50N65HF

OST50N65HZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.8. Size:745K  oriental semi
ost50n65hxf.pdf

OST50N65HF
OST50N65HF

OST50N65HXF Enhancement Mode N-Channel Power IGBT General Description OST50N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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