IXGK120N60B
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK120N60B
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 660
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.1(max)
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 45
nS
Coesⓘ - Capacitancia de salida, typ: 680
pF
Qgⓘ - Carga total de la puerta, typ: 350
nC
Paquete / Cubierta:
TO264
Búsqueda de reemplazo de IXGK120N60B
- IGBT
IXGK120N60B
Datasheet (PDF)
..1. Size:601K ixys
ixgk120n60b ixgx120n60b.pdf 
HiPerFASTTM IGBTIXGK 120N60B VCES = 600 VIXGX 120N60B IC25 = 200 AVCE(sat) = 2.1 VSymbol Test Conditions Maximum Ratings PLUS 247TM(IXGX)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGS = 1 M 600 VVCES Continuous 20 V (TAB)GVGEM Transient 30 VCEIC25 TC = 25C 200 A TO-264 AAIC90 TC = 90C 120 A (IXGK)IL(RMS) External lead limit 76 AICM TC
..2. Size:154K ixys
ixgk120n60b.pdf
HiPerFASTTM IGBTs VCES = 600VIXGK120N60BIC90 = 120AIXGX120N60BVCE(sat) 2.1VTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM Transient 30 VIC25 TC = 25C ( Chip Capability ) 200 AIC90 TC = 90C 120 AILRMS Termin
0.1. Size:197K ixys
ixgk120n60b3-ixgx120n60b3.pdf
VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG
0.2. Size:194K ixys
ixgk120n60b3.pdf
VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG
4.1. Size:186K ixys
ixgk120n60c2.pdf
Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25
4.2. Size:925K ixys
ixgk120n60c2 ixgx120n60c2.pdf
ADVANCE TECHNICAL INFORMATIONVCES = 600 VHiPerFASTTM IGBT IXGK 120N60C2IC110 = 120 ALightspeed 2TM SeriesIXGX 120N60C2VCE(sat) = 2.5 Vtfi(typ) = 45 nsSymbol Test Conditions Maximum RatingsTO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C (limited by leads)
4.3. Size:211K ixys
ixgk120n60a3.pdf
GenX3TM A3-Class IXGK120N60A3 VCES = 600VIXGX120N60A3IC110 = 120AIGBTSVCE(sat) 1.35VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VG(TAB)CVGES Continuous 20 VEEVGEM Transient 30 VIC25 TC = 25C 200 APLUS 2
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