OST75N65HSMF Todos los transistores

 

OST75N65HSMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST75N65HSMF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 107 nS
   Coesⓘ - Capacitancia de salida, typ: 230 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de OST75N65HSMF IGBT

   - Selección ⓘ de transistores por parámetros

 

OST75N65HSMF Datasheet (PDF)

 ..1. Size:772K  oriental semi
 ost75n65hsmf.pdf pdf_icon

OST75N65HSMF

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:777K  oriental semi
 ost75n65hswf.pdf pdf_icon

OST75N65HSMF

 4.2. Size:768K  oriental semi
 ost75n65hsxf.pdf pdf_icon

OST75N65HSMF

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.3. Size:747K  oriental semi
 ost75n65hsvf.pdf pdf_icon

OST75N65HSMF

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

Otros transistores... OST60N65HXF , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , GT30F124 , OST75N65HSNF , OST75N65HSVF , OST75N65HSXF , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF .

 

 
Back to Top

 


 
.