OST75N65HSVF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST75N65HSVF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 560 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 125 nS
Coesⓘ - Capacitancia de salida, typ: 1939 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de OST75N65HSVF - IGBT
OST75N65HSVF Datasheet (PDF)
ost75n65hsvf.pdf
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsxf.pdf
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hszf.pdf
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsnf.pdf
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsmf.pdf
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
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Liste
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