OST80N65H4EMF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST80N65H4EMF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 114 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 140 nS

Coesⓘ - Capacitancia de salida, typ: 153 pF

Encapsulados: TO247-4

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OST80N65H4EMF datasheet

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 ost80n65h4emf.pdf pdf_icon

OST80N65H4EMF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 3.1. Size:884K  oriental semi
 ost80n65h4ewf.pdf pdf_icon

OST80N65H4EMF

 5.1. Size:831K  oriental semi
 ost80n65hevf.pdf pdf_icon

OST80N65H4EMF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.2. Size:767K  oriental semi
 ost80n65hemf.pdf pdf_icon

OST80N65H4EMF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

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