SGT15T60SD1F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT15T60SD1F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 43 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
SGT15T60SD1F Datasheet (PDF)
sgt15t60sd1t sgt15t60sd1f sgt15t60sd1str.pdf
SGT15T60SD1T/F/S 15A600V C2SGT15T60SD1T/F/S 1Field Stop IIIG UPS,SMPS PFC 133 TO-263-2L E 15A600VVCE
sgt15t60qd1f.pdf
SGT15T60QD1F 15A600V C 2SGT15T60QD1F Field Stop1G UPS,SMPS PFC 3E 15A600VVCE(sat)( )=1.9V@IC=15A 123
sgt15u65sd1f sgt15u65sd1fd.pdf
SGT15U65SD1F(FD) 15A650V C 2SGT15U65SD1F(FD) 4 1GPlusField Stop IV+ UPSSMPS PFC 3 E 15A650VVCE(sat)( )=1.6V@IC
Otros transistores... OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , GT30J127 , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT , SGT20T60SD1F , SGT20T60SD1S .
History: HM15N120A | OST30N65HMF | IXGH32N60BU1 | IRGS4056D | OST20N135HRF | IRGP4069
History: HM15N120A | OST30N65HMF | IXGH32N60BU1 | IRGS4056D | OST20N135HRF | IRGP4069
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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