IXGN200N60A Todos los transistores

 

IXGN200N60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGN200N60A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 200

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 200

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: ISOTOP

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IXGN200N60A Datasheet (PDF)

1.1. ixgn200n60b.pdf Size:561K _ixys

IXGN200N60A
IXGN200N60A

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90C 120 A G = Gate, C = Collector, E = Emitter either em

1.2. ixgn200n60b3.pdf Size:186K _ixys

IXGN200N60A
IXGN200N60A

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A ? VCE(sat) ? ? 1.50V ? ? Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V E VGEM Transient 30 V C IC25 TC = 25C 300 A IC110 TC = 110C 200 A G = Ga

 1.3. ixgn200n60a2.pdf Size:553K _ixys

IXGN200N60A
IXGN200N60A

IXGN 200N60A2 VCES = 600 V IGBT IC25 = 200 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 200 A C IC110 TC = 110C 100 A ICM TC = 25C, 1 ms 400 A G

1.4. ixgn200n60b.pdf Size:559K _igbt

IXGN200N60A
IXGN200N60A

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90°C 120 A G = Gate, C = Collector, E = Emitter

 1.5. ixgn200n60b3.pdf Size:184K _igbt

IXGN200N60A
IXGN200N60A

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A ≤ VCE(sat) ≤ ≤ 1.50V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V E VGEM Transient ±30 V C IC25 TC = 25°C 300 A IC110 TC

Otros transistores... IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , 10N50E1D , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 .

 

 
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