NCE100ED65BT4 Todos los transistores

 

NCE100ED65BT4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE100ED65BT4

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 606 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 210 pF

Encapsulados: TO-247-4L

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NCE100ED65BT4 datasheet

 ..1. Size:738K  ncepower
 nce100ed65bt4.pdf pdf_icon

NCE100ED65BT4

NCE100ED65BT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC =

 2.1. Size:780K  ncepower
 nce100ed65bt.pdf pdf_icon

NCE100ED65BT4

NCE100ED65BT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC =

 4.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED65BT4

NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =

 4.2. Size:1092K  ncepower
 nce100ed65vtp4.pdf pdf_icon

NCE100ED65BT4

NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC

MOSTRAR MÁS

Otros transistores... TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , GT30F132 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , NCE100ED75VTP4 , NCE100TD120BTP .

 

 

 


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