IXGP12N100 Todos los transistores

 

IXGP12N100 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGP12N100
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Paquete / Cubierta: TO220
 

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Principales características: IXGP12N100

 ..1. Size:50K  ixys
 ixgp12n100.pdf pdf_icon

IXGP12N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C24 A TO-263 (IXGA) IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A

 ..2. Size:51K  ixys
 ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf pdf_icon

IXGP12N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C24 A TO-263 (IXGA) IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A

 0.1. Size:50K  ixys
 ixgp12n100a.pdf pdf_icon

IXGP12N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C24 A TO-263 (IXGA) IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A

 0.2. Size:84K  ixys
 ixgp12n100u1.pdf pdf_icon

IXGP12N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC =

MOSTRAR MÁS

Otros transistores... IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , TGAN40N60FD , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 , IXGP15N100C , IXGP15N120B , IXGP20N100 .

 

 
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