NCE100ED75VT4 Todos los transistores

 

NCE100ED75VT4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE100ED75VT4

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 606 W

|Vce|ⓘ - Tensión máxima colector-emisor: 750 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 46 nS

Coesⓘ - Capacitancia de salida, typ: 203 pF

Encapsulados: TO-247-4L

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NCE100ED75VT4 datasheet

 ..1. Size:764K  ncepower
 nce100ed75vt4.pdf pdf_icon

NCE100ED75VT4

NCE100ED75VT4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =

 2.1. Size:742K  ncepower
 nce100ed75vtp4.pdf pdf_icon

NCE100ED75VT4

NCE100ED75VTP4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC

 2.2. Size:811K  ncepower
 nce100ed75vt.pdf pdf_icon

NCE100ED75VT4

NCE100ED75VT 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =

 6.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED75VT4

NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =

MOSTRAR MÁS

Otros transistores... BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , FGH40N60UFD , NCE100ED75VTP4 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD , NCE15TD120BD .

History: SGT70N65FDM1P7 | MSG20T65FQC | NCE100TD120BTP | NCE100ED75VTP4 | NCE100TD120VTP

 

 

 

 

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