NCE15TD135LP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE15TD135LP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Encapsulados: TO-3PN
Búsqueda de reemplazo de NCE15TD135LP IGBT
- Selección ⓘ de transistores por parámetros
NCE15TD135LP datasheet
nce15td135lp.pdf
PbFreeProduct NCE15TD135LP 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td135lt.pdf
PbFreeProduct NCE15TD135LT 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td120lp.pdf
PbFreeProduct NCE15TD120LP 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td120bd.pdf
Pb Free Product NCE15TD120BD 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
Otros transistores... NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD , NCE15TD120BD , NCE15TD120LP , NCE15TD120LT , SGT50T65FD1PT , NCE15TD135LT , NCE15TD60BP , NCE15TD60BT , NCE15TD65BF , NCE15TD65BP , NCE15TD65BT , NCE160ED120VTP , NCE160ED120VTP4 .
History: NCE15TD60BP
History: NCE15TD60BP
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815 | bu406 | j201 datasheet | 2n5088 datasheet