NCE15TD60BP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE15TD60BP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 105 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Paquete / Cubierta: TO-3P
- Selección de transistores por parámetros
NCE15TD60BP Datasheet (PDF)
nce15td60bp.pdf
Pb Free ProductNCE15TD60BP600V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td60bd nce15td60b nce15td60bf.pdf
PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce15td60bt.pdf
Pb Free ProductNCE15TD60BT600V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce15td60bd.pdf
Pb Free ProductNCE15TD60BD600V, 15A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: VS-GB150TS60NPBF | GT25Q101 | NCE20TH60BP
History: VS-GB150TS60NPBF | GT25Q101 | NCE20TH60BP
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