NCE25TC120HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE25TC120HD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 365 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 253 pF
Qgⓘ - Carga total de la puerta, typ: 127 nC
Paquete / Cubierta: TO-263
- Selección de transistores por parámetros
NCE25TC120HD Datasheet (PDF)
nce25tc120hd.pdf

Pb Free ProductNCE25TC120HD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120lp.pdf

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120w.pdf

Pb Free ProductNCE25TD120W1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120wt.pdf

Pb Free ProductNCE25TD120WT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: VS-GB150TS60NPBF | GT25Q101 | NCE20TH60BP
History: VS-GB150TS60NPBF | GT25Q101 | NCE20TH60BP



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