NCE25TD120BD Todos los transistores

 

NCE25TD120BD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE25TD120BD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 365 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 72 pF
   Qgⓘ - Carga total de la puerta, typ: 146 nC
   Paquete / Cubierta: TO-263
 

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NCE25TD120BD Datasheet (PDF)

 ..1. Size:1324K  ncepower
 nce25td120bd.pdf pdf_icon

NCE25TD120BD

Pb Free ProductNCE25TD120BD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

 3.1. Size:357K  ncepower
 nce25td120bt.pdf pdf_icon

NCE25TD120BD

PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 4.1. Size:382K  ncepower
 nce25td120lp.pdf pdf_icon

NCE25TD120BD

PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp

 4.2. Size:1488K  ncepower
 nce25td120w.pdf pdf_icon

NCE25TD120BD

Pb Free ProductNCE25TD120W1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching

MOSTRAR MÁS

Otros transistores... NCE160ED120VTP4 , NCE160ED65VTP , NCE160ED65VTP4 , NCE20TD60BP , NCE20TD60BT , NCE20TD65BD , NCE20TH60BF , NCE25TC120HD , FGPF4633 , NCE25TD120LP , NCE25TD120VD , NCE25TD120VT , NCE25TD120VTP , NCE25TD120W , NCE25TD120WT , NCE25TD135LP , NCE30TD65BD .

 

 
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