NCE40ER65BP Todos los transistores

 ..1. Size:1395K  ncepower
 nce40er65bp.pdf

Pb Free Product NCE40ER65BP 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 0.1. Size:1433K  ncepower
 nce40er65bpf.pdf

Pb Free Product NCE40ER65BPF 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 4.1. Size:1416K  ncepower
 nce40er65bt.pdf

Pb Free Product NCE40ER65BT 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 8.1. Size:783K  ncepower
 nce40ed65bt.pdf

NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 8.2. Size:1119K  ncepower
 nce40ed65vt.pdf

NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40

 8.3. Size:1203K  ncepower
 nce40ed120vtp.pdf

NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

 8.4. Size:776K  ncepower
 nce40eu65ut.pdf

NCE40EU65UT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 40

 8.5. Size:1189K  ncepower
 nce40ed120vt.pdf

NCE40ED120VT 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

 8.6. Size:704K  ncepower
 nce40ed65bf.pdf

NCE40ED65BF 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 8.7. Size:780K  ncepower
 nce40ed75vt.pdf

NCE40ED75VT 750V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 40