NCE40EU65UT Todos los transistores

 

NCE40EU65UT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40EU65UT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 245 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 69 pF

Encapsulados: TO247

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NCE40EU65UT datasheet

 ..1. Size:776K  ncepower
nce40eu65ut.pdf pdf_icon

NCE40EU65UT

NCE40EU65UT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 40

 8.1. Size:1433K  ncepower
nce40er65bpf.pdf pdf_icon

NCE40EU65UT

Pb Free Product NCE40ER65BPF 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching

 8.2. Size:783K  ncepower
nce40ed65bt.pdf pdf_icon

NCE40EU65UT

NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 8.3. Size:1119K  ncepower
nce40ed65vt.pdf pdf_icon

NCE40EU65UT

NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40

Otros transistores... NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , NCE40ED65VT , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF , NCE40ER65BT , JT075N065WED , NCE40T120VT , NCE40T120WD , NCE40T60BP , NCE40TD120LP , NCE40TD120LT , NCE40TD120UT , NCE40TD120WW , NCE40TD135LP .

History: NCE40ER65BPF

 

 

 


History: NCE40ER65BPF

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