NCE40T120VT Todos los transistores

 

NCE40T120VT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40T120VT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 468 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 177 pF

Encapsulados: TO-247

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NCE40T120VT datasheet

 ..1. Size:1182K  ncepower
nce40t120vt.pdf pdf_icon

NCE40T120VT

 5.1. Size:1431K  ncepower
nce40t120wd.pdf pdf_icon

NCE40T120VT

 8.1. Size:1165K  ncepower
nce40td120ww.pdf pdf_icon

NCE40T120VT

Pb Free Product NCE40TD120WW 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 8.2. Size:590K  ncepower
nce40th60bp.pdf pdf_icon

NCE40T120VT

PbFreeProduct NCE40TH60BP 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw

Otros transistores... NCE40ED65BF , NCE40ED65BT , NCE40ED65VT , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF , NCE40ER65BT , NCE40EU65UT , CRG40T60AK3HD , NCE40T120WD , NCE40T60BP , NCE40TD120LP , NCE40TD120LT , NCE40TD120UT , NCE40TD120WW , NCE40TD135LP , NCE40TD135LT .

 

 

 


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