NCE75ED65VTP Todos los transistores

 

NCE75ED65VTP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE75ED65VTP
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 402 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 157 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

NCE75ED65VTP Datasheet (PDF)

 ..1. Size:1142K  ncepower
 nce75ed65vtp.pdf pdf_icon

NCE75ED65VTP

NCE75ED65VTP650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 7

 3.1. Size:1082K  ncepower
 nce75ed65vt4.pdf pdf_icon

NCE75ED65VTP

NCE75ED65VT4650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 7

 3.2. Size:1129K  ncepower
 nce75ed65vt.pdf pdf_icon

NCE75ED65VTP

NCE75ED65VT650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 75

 5.1. Size:800K  ncepower
 nce75ed65bt.pdf pdf_icon

NCE75ED65VTP

NCE75ED65BT650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 75

MOSTRAR MÁS

Otros transistores... NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 , NCE80TD65BT , NCE75ED75VT , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 .

History: APTGF330SK60D3 | SL25T120FL | MMG100J060U | DIM800DCS12-A | IKD15N60RF | CM400DY-66H | IRGP4266D

 

 
Back to Top

 


 
.