NCE75ED65VTP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE75ED65VTP  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 402 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 157 pF

Encapsulados: TO247

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NCE75ED65VTP datasheet

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NCE75ED65VTP

NCE75ED65VTP 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7

 3.1. Size:1082K  ncepower
 nce75ed65vt4.pdf pdf_icon

NCE75ED65VTP

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7

 3.2. Size:1129K  ncepower
 nce75ed65vt.pdf pdf_icon

NCE75ED65VTP

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75

 5.1. Size:800K  ncepower
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NCE75ED65VTP

NCE75ED65BT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 75

MOSTRAR MÁS

Otros transistores... NCE60TD65BT4, NCE75ED120VT, NCE75ED120VT4, NCE75ED120VTP, NCE75ED120VTP4, NCE75ED65BT, NCE75ED65VT, NCE75ED65VT4, IXRH40N120, NCE75ED75VT, NCE75ED75VT4, NCE75EU65UT, NCE75T120VT, NCE75TD120BT, NCE75TD120BT4, NCE75TD120BTP, NCE75TD120BTP4