NCE75TD120BT Todos los transistores

 

NCE75TD120BT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE75TD120BT
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 833 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 327 pF
   Qgⓘ - Carga total de la puerta, typ: 572 nC
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

NCE75TD120BT Datasheet (PDF)

 ..1. Size:1863K  ncepower
 nce75td120bt.pdf pdf_icon

NCE75TD120BT

Pb Free ProductNCE75TD120BT1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 0.1. Size:1502K  ncepower
 nce75td120btp4.pdf pdf_icon

NCE75TD120BT

Pb Free ProductNCE75TD120BTP41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 0.2. Size:1513K  ncepower
 nce75td120btp.pdf pdf_icon

NCE75TD120BT

Pb Free ProductNCE75TD120BTP1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

 0.3. Size:1529K  ncepower
 nce75td120bt4.pdf pdf_icon

NCE75TD120BT

Pb Free ProductNCE75TD120BT41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching

MOSTRAR MÁS

Otros transistores... NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 , NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , IRGP4062D , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT .

History: STGE50NC60WD | DL2G75SH6A | IXBN75N170A

 

 
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