BLG15T65FUA-P Todos los transistores

 

BLG15T65FUA-P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG15T65FUA-P
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 78 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 15
   Capacitancia de salida (Cc), typ, pF: 41
   Carga total de la puerta (Qg), typ, nC: 38
   Paquete / Cubierta: TO-220

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BLG15T65FUA-P Datasheet (PDF)

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blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf

BLG15T65FUA-P
BLG15T65FUA-P

BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf

BLG15T65FUA-P
BLG15T65FUA-P

BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1

Otros transistores... NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , BLG15T65FUA-B , GT30J124 , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , BLG20T65FULA-P .

 

 
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