BLG20T65FDLA-F Todos los transistores

 

BLG20T65FDLA-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG20T65FDLA-F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 43 pF
   Paquete / Cubierta: TO-247
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BLG20T65FDLA-F Datasheet (PDF)

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 blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf pdf_icon

BLG20T65FDLA-F

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

 5.1. Size:974K  belling
 blg20t65fula-p blg20t65fula-a.pdf pdf_icon

BLG20T65FDLA-F

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGT600U170D4 | APTGT75SK120D1

 

 
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