BLG20T65FULA-A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG20T65FULA-A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 39 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 43 pF
Paquete / Cubierta: TO-220F
- Selección de transistores por parámetros
BLG20T65FULA-A Datasheet (PDF)
blg20t65fula-p blg20t65fula-a.pdf

BLG20T65FULA IGBT 1Description Step-Down Converter BLG20T65FULA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
blg20t65fdla-a blg20t65fdla-p blg20t65fdla-f blg20t65fdla-b.pdf

BLG20T65FDLA IGBT 1Description Step-Down Converter BLG20T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for BLDC, UPS, and low V applications. CE(sat)KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI
Otros transistores... BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , BLG20T65FULA-P , SGT40N60NPFDPN , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F , BLG40T65FDK-W .
History: BLG40T65FUK-F | MG200Q1US51 | IRG4BC10SD-L | NGTB30N120FL2 | IRGS4640D | BLG60T65FDK-K
History: BLG40T65FUK-F | MG200Q1US51 | IRG4BC10SD-L | NGTB30N120FL2 | IRGS4640D | BLG60T65FDK-K



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