BLG40T120FUH-F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLG40T120FUH-F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 367 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 81 nS

Coesⓘ - Capacitancia de salida, typ: 322 pF

Encapsulados: TO-247

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BLG40T120FUH-F datasheet

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BLG40T120FUH-F

BLG40T120FUH IGBT 1 Description Step-Down Converter BLG40T120FUH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A

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BLG40T120FUH-F

BLG40T120FUK IGBT 1 Description Step-Down Converter BLG40T120FUK is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A C

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 blg40t120fdh-f.pdf pdf_icon

BLG40T120FUH-F

BLG40T120FDH IGBT 1 Description Step-Down Converter BLG40T120FDH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CES I 40 A

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 blg40t65fdk-w blg40t65fdk-f.pdf pdf_icon

BLG40T120FUH-F

BLG40T65FDK IGBT 1 Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

MOSTRAR MÁS

Otros transistores... BLG20T65FDLA-B, BLG20T65FULA-P, BLG20T65FULA-A, BLG3040-D, BLG3040-B, BLG3040-P, BLG3040-I, BLG40T120FDH-F, RJP30E2DPP-M0, BLG40T120FUK-F, BLG40T65FDK-W, BLG40T65FDK-F, BLG40T65FDL-F, BLG40T65FDL-K, BLG40T65FDL-W, BLG40T65FUK-W, BLG40T65FUK-F