BLG40T120FUH-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG40T120FUH-F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 367 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 81 nS
Coesⓘ - Capacitancia de salida, typ: 322 pF
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de BLG40T120FUH-F IGBT
BLG40T120FUH-F Datasheet (PDF)
blg40t120fuh-f.pdf
BLG40T120FUH IGBT 1Description Step-Down Converter BLG40T120FUH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A
blg40t120fuk-f.pdf
BLG40T120FUK IGBT 1Description Step-Down Converter BLG40T120FUK is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A C
blg40t120fdh-f.pdf
BLG40T120FDH IGBT 1Description Step-Down Converter BLG40T120FDH is obtained by advanced , Trench Field Stop (T-FS) technology which reduces the conduction loss, improves switching performance, and enhances the avalanche energy. The IGBT is suitable device for UPS, Welding, and high-speed switching. KEY CHARACTERISTICS Parameter Value Unit V 1200 V CESI 40 A
blg40t65fdk-w blg40t65fdk-f.pdf
BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Otros transistores... BLG20T65FDLA-B , BLG20T65FULA-P , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , FGA25N120ANTD , BLG40T120FUK-F , BLG40T65FDK-W , BLG40T65FDK-F , BLG40T65FDL-F , BLG40T65FDL-K , BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F .
History: IXGN60N60C2D1
History: IXGN60N60C2D1
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent