BLG40T65FDK-F Todos los transistores

 

BLG40T65FDK-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG40T65FDK-F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Coesⓘ - Capacitancia de salida, typ: 116 pF
   Paquete / Cubierta: TO-247

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BLG40T65FDK-F Datasheet (PDF)

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BLG40T65FDK-F
BLG40T65FDK-F

BLG40T65FDK IGBT 1Description Step-Down Converter BLG40T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

 4.1. Size:1127K  belling
blg40t65fdl-f blg40t65fdl-k blg40t65fdl-w.pdf

BLG40T65FDK-F
BLG40T65FDK-F

BLG40T65FDL IGBT 1Description Step-Down Converter BLG4065FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 5.1. Size:1083K  belling
blg40t65ful-f blg40t65ful-k blg40t65ful-w.pdf

BLG40T65FDK-F
BLG40T65FDK-F

BLG40T65FUL IGBT 1Description Step-Down Converter BLG4065FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat)switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

 5.2. Size:954K  belling
blg40t65fuk-w blg40t65fuk-f.pdf

BLG40T65FDK-F
BLG40T65FDK-F

BLG40T65FUK IGBT 1Description Step-Down Converter BLG40T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for welding, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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