BLG60T65FDK-W Todos los transistores

 

BLG60T65FDK-W - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG60T65FDK-W
   Tipo de transistor: IGBT + Diode
   Código de marcado: G60T65FDK
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 122 pF
   Qgⓘ - Carga total de la puerta, typ: 137 nC
   Paquete / Cubierta: TO-3PN

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BLG60T65FDK-W Datasheet (PDF)

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blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FDK-W
BLG60T65FDK-W

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

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blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FDK-W
BLG60T65FDK-W

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

 5.1. Size:1113K  belling
blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FDK-W
BLG60T65FDK-W

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

Otros transistores... BLG50T65FDKA-F , BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , BLG50T65FKA-F , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K , GT30F126 , BLG60T65FDL-F , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F .

 

 
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