BLG75T65FDK-F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLG75T65FDK-F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 468 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 66 nS

Coesⓘ - Capacitancia de salida, typ: 187 pF

Encapsulados: TO-247

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BLG75T65FDK-F datasheet

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BLG75T65FDK-F

BLG75T65FDK IGBT 1 Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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BLG75T65FDK-F

BLG75T65FDL IGBT 1 Description Step-Down Converter BLG75T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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BLG75T65FDK-F

BLG75T65FUK IGBT 1 Description Step-Down Converter BLG75T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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