BLQG3040A-B Todos los transistores

 

BLQG3040A-B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLQG3040A-B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 370 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.12 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 3000 nS
   Coesⓘ - Capacitancia de salida, typ: 62 pF
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

BLQG3040A-B Datasheet (PDF)

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BLQG3040A-B

BLQG3040A IGBT 1Description BLQG3040A is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver.

 6.1. Size:875K  belling
 blqg3040-d blqg3040-b.pdf pdf_icon

BLQG3040A-B

BLQG3040 IGBT 1Description BLQG3040 is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. K

Otros transistores... BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F , BLQG3040A-D , SGH80N60UFD , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA .

 

 
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