BLQG50T65FCKA-F Todos los transistores

 

BLQG50T65FCKA-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLQG50T65FCKA-F
   Tipo de transistor: IGBT + Diode
   Código de marcado: 50T65FCKA
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 345 pF
   Qgⓘ - Carga total de la puerta, typ: 110 nC
   Paquete / Cubierta: TO-247
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BLQG50T65FCKA-F Datasheet (PDF)

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BLQG50T65FCKA-F

BLQG50T65FCKA IGBT 1Description Step-Down Converter BLQG50T65FCKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

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BLQG50T65FCKA-F

BLQG50T65FDLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MSG80N350FQC | BLQG50T65FDLA-K | HGTP10N50C1D | BLQG50T65FDLA-W | 1MBI300HH-120L-50 | 1MBI2400U4D-170 | MPBW50N65ED

 

 
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