IXGT15N120BD1 Todos los transistores

 

IXGT15N120BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT15N120BD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 160

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT15N120BD1 Datasheet (PDF)

1.1. ixgt15n120b2d1.pdf Size:66K _ixys

IXGT15N120BD1
IXGT15N120BD1

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V (IXGH) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G TAB C

1.2. ixgt15n120b.pdf Size:170K _ixys

IXGT15N120BD1
IXGT15N120BD1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

 1.3. ixgt15n120cd1.pdf Size:60K _ixys

IXGT15N120BD1
IXGT15N120BD1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

1.4. ixgt15n120c.pdf Size:52K _ixys

IXGT15N120BD1
IXGT15N120BD1

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V E VGEM Transient ±30 V (TAB) IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-247 AD (IXGH) ICM TC =

 1.5. ixgh15n120b ixgt15n120b.pdf Size:529K _ixys

IXGT15N120BD1
IXGT15N120BD1

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

1.6. ixgt15n120bd1.pdf Size:60K _ixys

IXGT15N120BD1
IXGT15N120BD1

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

Otros transistores... IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , RJP30H1DPD , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 .

 

 
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