MPBW50N65E Todos los transistores

 

MPBW50N65E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPBW50N65E
   Tipo de transistor: IGBT + Diode
   Código de marcado: MP50N65E
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 62 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Qgⓘ - Carga total de la puerta, typ: 230 nC
   Paquete / Cubierta: TO247

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MPBW50N65E Datasheet (PDF)

 ..1. Size:1140K  cn marching-power
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MPBW50N65E

MPBW50N65E 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBW50N65E MP50N65E TO-247-3

 0.1. Size:1401K  cn marching-power
 mpbw50n65es.pdf pdf_icon

MPBW50N65E

MPBW50N65ES 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBW50N65ES MP50N65ES TO-247-

 0.2. Size:1003K  cn marching-power
 mpbw50n65eh.pdf pdf_icon

MPBW50N65E

MPBW50N65EH 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW50N65EH MP50N65EH TO-247-3 1 Maximum Rated Values Parameter Sy

 0.3. Size:1012K  cn marching-power
 ampbw50n65e.pdf pdf_icon

MPBW50N65E

AMPBW50N65E 650V-50A Trench and Field Stop IGBT Features Applications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFC positive temperature coefficient in VCEsat PTC Heater Low VCEsat fast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package

MOSTRAR MÁS

Otros transistores... MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , GT30J122 , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA .

History: MPBW40N65BU

 

 
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