MPBW50N65E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPBW50N65E
Tipo de transistor: IGBT + Diode
Código de marcado: MP50N65E
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 62 nS
Coesⓘ - Capacitancia de salida, typ: 175 pF
Qgⓘ - Carga total de la puerta, typ: 230 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MPBW50N65E - IGBT
MPBW50N65E Datasheet (PDF)
mpbw50n65e.pdf
MPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65E MP50N65E TO-247-3
mpbw50n65es.pdf
MPBW50N65ES650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ES MP50N65ES TO-247-
mpbw50n65eh.pdf
MPBW50N65EH650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW50N65EH MP50N65EH TO-247-31Maximum Rated ValuesParameter Sy
ampbw50n65e.pdf
AMPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFCpositive temperature coefficient in VCEsat PTC Heater Low VCEsatfast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distributionType Marking Package
mpbw50n65ed.pdf
MPBW50N65ED650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ED MP50N65ED TO-247-
Otros transistores... MPBW25N120BF , MPBW30N120E , MPBW30N65E , MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , IHW20N120R2 , MPBW50N65ED , MPBW50N65EH , MPBW50N65ES , MPBW75N65E , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2