MPBW50N65ED Todos los transistores

 

MPBW50N65ED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPBW50N65ED
   Tipo de transistor: IGBT + Diode
   Código de marcado: MP50N65ED
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 62 nS
   Coesⓘ - Capacitancia de salida, typ: 148 pF
   Qgⓘ - Carga total de la puerta, typ: 230 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MPBW50N65ED Datasheet (PDF)

 ..1. Size:1168K  cn marching-power
 mpbw50n65ed.pdf pdf_icon

MPBW50N65ED

MPBW50N65ED650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ED MP50N65ED TO-247-

 4.1. Size:1401K  cn marching-power
 mpbw50n65es.pdf pdf_icon

MPBW50N65ED

MPBW50N65ES650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ES MP50N65ES TO-247-

 4.2. Size:1003K  cn marching-power
 mpbw50n65eh.pdf pdf_icon

MPBW50N65ED

MPBW50N65EH650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW50N65EH MP50N65EH TO-247-31Maximum Rated ValuesParameter Sy

 4.3. Size:1012K  cn marching-power
 ampbw50n65e.pdf pdf_icon

MPBW50N65ED

AMPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFCpositive temperature coefficient in VCEsat PTC Heater Low VCEsatfast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distributionType Marking Package

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: HGTP10N50C1D

 

 
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