DAZF075G120XCA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DAZF075G120XCA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75(80C) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 160 pF
Paquete / Cubierta: SOT227
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DAZF075G120XCA Datasheet (PDF)
dazf075g120xca.pdf
DAZF075G120XCADACO SEMICONDUCTOR CO., LTD.IGBT Module 1200V / 75AFeaturesPreliminarySOT-227 Fast Switching Trench / E GField Stop IGBT Technology Low Switching Losses High Short Circuit CapabilityCApplicationsG = Gate, C = Collector, E = Emitter Welder / Power Supply UPS / InverterDimensions in inches and (millimeters) Industrial Mot
dazf075g120sca.pdf
DAZF075G120SCADACO SEMICONDUCTOR CO., LTD.High-frequency switchIGBT Module 1200V / 75A SOT-227E Preliminary GFeatures Fast switching field stop IGBT trench technologyC Low switching loss Superfast diodes G = Gate, C = Collector, E = Emitter High short circuit capabilityDimensions in inches and (millimeters)Applications Welder / Power Su
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