DAZF100G170XCA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DAZF100G170XCA 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 735 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
trⓘ - Tiempo de subida, typ: 95 nS
Coesⓘ - Capacitancia de salida, typ: 396 pF
Encapsulados: SOT227
📄📄 Copiar
Búsqueda de reemplazo de DAZF100G170XCA IGBT
- Selecciónⓘ de transistores por parámetros
DAZF100G170XCA datasheet
dazf100g170xca.pdf
DAZF100G170XCA DACO SEMICONDUCTOR CO., LTD. IGBT Module 1700V / 100A Preliminary SOT-227 Features E G Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses High Short Circuit Capability C Applications G = Gate, C = Collector, E = Emitter Welder / Power Supply Dimensions in inches and (millimeters) UPS / Inverter Industrial Mo
dazf100g120xca.pdf
DAZF100G120XCA DACO SEMICONDUCTOR CO., LTD. IGBT Module 1200V / 100A Preliminary SOT-227 Features E G Fast Switching Trench / Field Stop IGBT Technology Low Switching Losses High Short Circuit Capability C Applications G = Gate, C = Collector, E = Emitter Welder / Power Supply Dimensions in inches and (millimeters) UPS / Inverter Industrial Motor Drive M
dazf100g120sca.pdf
DAZF100G120SCA DACO SEMICONDUCTOR CO., LTD. High-frequency switch IGBT Module 1200V / 100A SOT-227 E G Preliminary Features Fast Switching Trench / Field Stop IGBT Technology C Low Switching Losses Super Fast Diodes G = Gate, C = Collector, E = Emitter High Short Circuit Capability Dimensions in inches and (millimeters) Applications Welder / P
dazf150g120sca.pdf
DAZF150G120SCA DACO SEMICONDUCTOR CO., LTD. High-frequency switch IGBT Module 1200V / 150A SOT-227 E G Preliminary Features Fast Switching Trench / Field Stop IGBT Technology C Low Switching Losses Super Fast Diodes G = Gate, C = Collector, E = Emitter High Short Circuit Capability Dimensions in inches and (millimeters) Applications Welder /
Otros transistores... DAHF150G120SB, DAHF200G120SB, DAHF225G120SB, DAHF300G120SB, DAZF075G120SCA, DAZF075G120XCA, DAZF100G120SCA, DAZF100G120XCA, FGH40N60SFD, DAZF150G120SCA, DAZF150G120XCA, AOB10B65M1, AOB15B65MQ1, AOB20B65M1, AOB30B65LN2V, AOB5B65M1, AOBS30B65LN
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
a933 transistor | d209l | irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent





