AOB20B65M1 Todos los transistores

 ..1. Size:1170K  aosemi
 aob20b65m1.pdf

AOK20B65M1/AOT20B65M1/AOB20B65M1 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

 9.1. Size:405K  aosemi
 aot20s60 aob20s60 aotf20s60.pdf

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

 9.2. Size:324K  aosemi
 aob20s60.pdf

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

 9.3. Size:263K  aosemi
 aob20c60.pdf

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

 9.4. Size:520K  aosemi
 aot20s60l aob20s60l aotf20s60l aotf20s60.pdf

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced MOSTM IDM 80A high voltage process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ

 9.5. Size:325K  aosemi
 aob20s60l.pdf

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

 9.6. Size:255K  inchange semiconductor
 aob20s60.pdf

isc N-Channel MOSFET Transistor AOB20S60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo