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AOB5B65M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB5B65M1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 83 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 13 nS
   Coesⓘ - Capacitancia de salida, typ: 36 pF
   Paquete / Cubierta: TO263
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AOB5B65M1 Datasheet (PDF)

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AOB5B65M1

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

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AOB5B65M1

AOB5B60DTM600V, 5A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 5Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to o

Otros transistores... DAZF100G120XCA , DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , CRG40T60AN3H , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 .

History: STGB7NC60HD | MMG100J060U | CPV363M4UPBF | APTGF150A120T | HGTD6N50E1S | MMG200D170B | IRG7PG35U

 

 
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