AOK40B120M1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOK40B120M1 datasheet

..1. Size:995K aosemi
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AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

5.1. Size:609K aosemi
aok40b120p1.pdf pdf_icon

AOK40B120P1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) IC (TC=100 C) 40A High short-circuit ruggedness VCE(sat) (TJ=25 C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

5.2. Size:842K aosemi
aok40b120h1.pdf pdf_icon

AOK40B120H1 TM 1200V, 40A AlphaIGBT With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

5.3. Size:636K aosemi
aok40b120n1.pdf pdf_icon

AOK40B120N1 TM 1200V, 40A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE 1200V 1200V latest Alpha IGBT ( IGBT) technology Very low VCE(sat) and VF IC (TC=100 40A C) High short-circuit ruggedness VCE(sat) (TJ=25 1.97V C) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

Otros transistores... AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , IKW50N60T , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 .