IXGT24N60C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT24N60C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 150
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 48
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 25
Capacitancia de salida (Cc), typ, pF: 120
Carga total de la puerta (Qg), typ, nC: 55
Paquete / Cubierta: TO268
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IXGT24N60C Datasheet (PDF)
ixgt24n60c.pdf
IXGH 24N60C VCES = 600 VHiPerFASTTM IGBTIXGT 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110
ixgt24n60cd1.pdf
IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A
ixgh24n170a ixgt24n170a.pdf
IXGH 24N170AVCES = 1700 VHigh VoltageIXGT 24N170AIC25 = 24 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 45 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C24 ATO-247 AD (IXGH)IC90 TC = 90C16 AICM
ixgt24n170ah1.pdf
Preliminary Technical InformationHigh VoltageVCES = 1700VIXGH24N170AH1IGBTs w/DiodeIXGT24N170AH1IC25 = 24AVCE(sat) 6.0Vtfi(typ) = 40nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1700 V CEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 24 A
ixgt24n170.pdf
Advance Technical InformationVCES = 1700VHigh Voltage IXGH24N170IC25 = 50AIGBT IXGT24N170VCE(sat) 3.3Vtfi(typ) = 250nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGC C (TAB)VGES Continuous 20 VEVGEM Transient 30 VTO-268 (IXGT)IC25 TC = 25C 50 AIC9
ixgt24n170a.pdf
Preliminary Technical InformationHigh VoltageVCES = 1700VIXGH24N170AIGBTsIXGT24N170AIC25 = 24AVCE(sat) 6.0Vtfi(typ) = 40nsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 1700 V CEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 24 ATO-268 (IX
Otros transistores... IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , RJP30E2DPP-M0 , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ