AOK40B120P1 Todos los transistores

 

AOK40B120P1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK40B120P1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 600 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.83 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 34 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Qgⓘ - Carga total de la puerta, typ: 202 nC
   Paquete / Cubierta: TO247
 

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AOK40B120P1 Datasheet (PDF)

 ..1. Size:609K  aosemi
 aok40b120p1.pdf pdf_icon

AOK40B120P1

AOK40B120P1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) IC (TC=100C) 40A High short-circuit ruggedness VCE(sat) (TJ=25C) 1.83V Very low turn-on EMI Easy paralleling capability Low gate charge Qg High efficiency a

 5.1. Size:842K  aosemi
 aok40b120h1.pdf pdf_icon

AOK40B120P1

AOK40B120H1TM1200V, 40A AlphaIGBTWith Soft and Fast Recovery Anti-parallel DiodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.8V High efficient turn-on di/dt controllability Very high switching speed Low

 5.2. Size:636K  aosemi
 aok40b120n1.pdf pdf_icon

AOK40B120P1

AOK40B120N1TM1200V, 40A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product Summary VCE1200V 1200V latest Alpha IGBT (IGBT) technology Very low VCE(sat) and VF IC (TC=100 40AC) High short-circuit ruggedness VCE(sat) (TJ=25 1.97VC) Very low turn-on EMI Easy paralleling capability Low gate charge Qg High e

 5.3. Size:995K  aosemi
 aok40b120m1.pdf pdf_icon

AOK40B120P1

AOK40B120M1TM1200V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 1200V 1200V breakdown voltage IC (TC=100C) 40A Fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability High switching speed Low turn-o

MOSTRAR MÁS

Otros transistores... AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , GT30F131 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 .

History: IXGH50N90B2D1 | SGP23N60UF | MKI80-06T6K | MIXA30W1200TMH

 

 
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