AOK40B65HQ3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK40B65HQ3
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 312 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 74 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AOK40B65HQ3 - IGBT
AOK40B65HQ3 Datasheet (PDF)
aok40b65hq3.pdf
AOK40B65HQ3TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100 40AC) Low QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC application fo
aok40b65hq1.pdf
AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U
aok40b65hq2.pdf
AOK40B65HQ2TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications D
aok40b65h2al.pdf
AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu
aok40b65h2al.pdf
AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo
aok40b65h1.pdf
AOK40B65H1TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur
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