AOK40B65HQ3 Todos los transistores

 

AOK40B65HQ3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK40B65HQ3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 312 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO247

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AOK40B65HQ3 datasheet

 ..1. Size:565K  aosemi
 aok40b65hq3.pdf pdf_icon

AOK40B65HQ3

AOK40B65HQ3 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 40A C) Low Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC application fo

 4.1. Size:569K  aosemi
 aok40b65hq1.pdf pdf_icon

AOK40B65HQ3

AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U

 4.2. Size:564K  aosemi
 aok40b65hq2.pdf pdf_icon

AOK40B65HQ3

AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D

 5.1. Size:535K  1
 aok40b65h2al.pdf pdf_icon

AOK40B65HQ3

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

MOSTRAR MÁS

Otros transistores... AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , SGH80N60UFD , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 .

History: SKM195GAL062D | JT075N120F2MA1E | ISL9V3036S3S | MPBW30N65E | MPBQ75N120E

 

 

 

 

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