AOK40B65HQ3 Todos los transistores

 

AOK40B65HQ3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK40B65HQ3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 312 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

AOK40B65HQ3 Datasheet (PDF)

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AOK40B65HQ3

AOK40B65HQ3TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100 40AC) Low QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC application fo

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 aok40b65hq1.pdf pdf_icon

AOK40B65HQ3

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

 4.2. Size:564K  aosemi
 aok40b65hq2.pdf pdf_icon

AOK40B65HQ3

AOK40B65HQ2TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications D

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 aok40b65h2al.pdf pdf_icon

AOK40B65HQ3

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

MOSTRAR MÁS

Otros transistores... AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 , GT30F133 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 .

History: DM2G150SH12AE | TT060U065FB | SPM1003 | APT15GT60KR

 

 
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