IXGT24N60CD1 Todos los transistores

 

IXGT24N60CD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT24N60CD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 48

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 55

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT24N60CD1 Datasheet (PDF)

1.1. ixgt24n60cd1.pdf Size:101K _ixys

IXGT24N60CD1
IXGT24N60CD1

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°C24 A

1.2. ixgt24n60c.pdf Size:52K _ixys

IXGT24N60CD1
IXGT24N60CD1

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C48 A TO-247 AD (IXGH) IC110 TC = 110°

 3.1. ixgt24n170.pdf Size:113K _ixys

IXGT24N60CD1
IXGT24N60CD1

Advance Technical Information VCES = 1700V High Voltage IXGH24N170 IC25 = 50A IGBT IXGT24N170 ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ tfi(typ) = 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C C (TAB) VGES Continuous ± 20 V E VGEM Transient ± 30 V TO-268 (IXGT) IC25 TC = 25°C 50 A IC9

3.2. ixgt24n170a.pdf Size:222K _ixys

IXGT24N60CD1
IXGT24N60CD1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170A IGBTs IXGT24N170A IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A TO-268 (IX

 3.3. ixgh24n170a ixgt24n170a.pdf Size:519K _ixys

IXGT24N60CD1
IXGT24N60CD1

IXGH 24N170A VCES = 1700 V High Voltage IXGT 24N170A IC25 = 24 A IGBT VCE(sat) = 6.0 V tfi(typ) = 45 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C24 A TO-247 AD (IXGH) IC90 TC = 90°C16 A ICM

3.4. ixgt24n170ah1.pdf Size:223K _ixys

IXGT24N60CD1
IXGT24N60CD1

Preliminary Technical Information High Voltage VCES = 1700V IXGH24N170AH1 IGBTs w/Diode IXGT24N170AH1 IC25 = 24A ≤ VCE(sat) ≤ ≤ 6.0V ≤ ≤ tfi(typ) = 40ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V C E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 24 A

Otros transistores... IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , IXGT20N60BD1 , IXGT24N60C , RJH60F5DPK , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 .

 

 
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